Germanium outperforms silicon in energy efficient transistors with n- und p- conduction

Germanium outperforms silicon in energy efficient transistors with n- und p- conduction Dresden, Germany (SPX) Feb 07, 2017 - A team of scientists from the Nanoelectronic Materials Laboratory (NaMLab gGmbH) and the Cluster of Excellence Center for Advancing Electronics Dresden (cfaed) at the Dresden University of Technology have demonstrated the world-wide first transistor based on germanium that can be programmed between electron- (n) and hole- (p) conduction. Transistors based on germanium can be operated at lo ... more

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