Raytheon hits another major milestone with GaN
Tewksbury MA (SPX) Apr 03, 2014 - Raytheon has achieved another significant milestone for next generation Gallium Nitride (GaN) Radio Frequency (RF) semiconductor technology. Through the Defense Advanced Research Projects Agency (DARPA) Near Junction Thermal Transport effort under the Thermal Management Technologies program, Raytheon's team is replacing GaN's current substrate, Silicon Carbide, with diamond, a material with 3-5X ... more
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