Researchers engineer improvements of technology used in DRAM
Lincoln NE (SPX) Nov 25, 2014 - The improvements in random access memory that have driven many advances of the digital age owe much to the innovative application of physics and chemistry at the atomic scale. Accordingly, a team led by UNL researchers has employed a Nobel Prize-winning material and common household chemical to enhance the properties of a component primed for the next generation of high-speed, high-capacit ... more
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